Intracavity Spontaneous Parametric Down-Conversion in Bragg Reflection Waveguide Edge Emitting Diode

被引：2
|
作者：
Wei, Si-Hang [1 ,2 ,3 ]
Shang, Xiang-Jun [1 ,2 ,3 ]
Ma, Ben [1 ,2 ,3 ]
Chen, Ze-Sheng [1 ,2 ,3 ]
Liao, Yong-Ping [1 ,2 ,3 ]
Ni, Hai-Qiao [1 ,2 ,3 ]
Niu, Zhi-Chuan [1 ,2 ,3 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 101408, Peoples R China
[3] Univ Sci & Technol China, Synerget Innovat Ctr Quantum Informat & Quantum P, Hefei 230026, Anhui, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2017年 / 34卷 / 07期
基金：
中国国家自然科学基金;
关键词：
2ND-HARMONIC GENERATION; LASERS; ALGAAS; INDEX; GAAS;
D O I：
10.1088/0256-307X/34/7/074202
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A four-wavelength Bragg reflection waveguide edge emitting diode based on intracavity spontaneous parametric down-conversion and four-wave mixing (FWM) processes is made. The structure and its tuning characteristic are designed by the aid of FDTD mode solution. The laser structure is grown by molecular beam epitaxy and processed to laser diode through the semiconductor manufacturing technology. Fourier transform infrared spectroscopy is applied to record wavelength information. Pump around 1.071 mu m, signal around 1.77 mu m, idler around 2.71 mu m and FWM signal around 1.35 mu m are observed at an injection current of 560 mA. The influences of temperature, carrier density and pump wavelength on tuning characteristic are shown numerically and experimentally.
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页数：5
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