COMPOSITE-FIELD MIC-PDS FOR LOW-BIAS-VOLTAGE OPERATION

被引：0

作者：

Yoshimatsu, T. ^{[1
]}

Muramoto, Y. ^{[1
]}

Kodama, S. ^{[1
]}

Furuta, T. ^{[1
]}

Shigekawa, N. ^{[1
]}

Yokoyama, H. ^{[1
]}

Ishibashi, T. ^{[2
]}

机构：

[1] NTT Corp, NTT Photon Labs, 3-1 Morinosato Wakamiya, Kanagawa 2430198, Japan

[2] NTT Elect Corp, Atsugi, Kanagawa 2430198, Japan

来源：

2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2010年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel maximized-induced-current-photodiode (MIC-PD) structure with a composite field depletion layer achieves high responsivity of 0.8 A/W and a wide 3-dB bandwidth of 30 GHz at a low reverse bias voltage of 2 V for optical input power of +7 dBm.

引用

页数：4

共 50 条

[31] Binary polymer composite dielectrics for flexible low-voltage organic field-effect transistors
Liu, Ziyang
Yin, Zhigang
Chen, Shan-Ci
Dai, Shilei
Huang, Jia
Zheng, Qingdong
ORGANIC ELECTRONICS, 2018, 53 : 205 - 212
[32] Analysis of non-volatile latch circuits with ferroelectric-gate field effect transistors for low power and low voltage operation
Yamamoto, S
Inoue, S
Ishiwara, H
2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, 2002, : 589 - 592
[33] LOW-VOLTAGE OPERATION OF A HIGH-RESISTIVITY LOAD SOI SRAM CELL BY REDUCED BACK-GATE-BIAS EFFECT
YAMAGUCHI, Y
TAKAHASHI, J
YAMAGUCHI, T
WADA, T
IWAMATSU, T
JOACHIM, HO
INOUE, Y
NISHIMURA, T
TSUBOUCHI, N
IEICE TRANSACTIONS ON ELECTRONICS, 1995, E78C (07) : 812 - 817
[34] Repetitive short circuit capability of SiC MOSFET at specific low gate-source voltage bias for more robust extreme operation
Jouha, Wadia
Richardeau, Frederic
Azzopardi, Stephane
MICROELECTRONICS RELIABILITY, 2021, 126 (126)
[35] Photosensitive organic field effect transistors: the influence of ZnPc morphology and bilayer dielectrics for achieving a low operating voltage and low bias stress effect
Dey, Anamika
Singh, Ashish
Das, Dipjyoti
Iyer, Parameswar Krishnan
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2016, 18 (47) : 32602 - 32609
[36] Low-voltage operation from the tower structure metal-oxide-semiconductor field-effect transistor Si field emitter
Koga, K
Kanemaru, S
Matsukawa, T
Itoh, J
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (02): : 588 - 591
[37] Stable Low-Voltage Operation Top-Gate Organic Field-Effect Transistors on Cellulose Nanocrystal Substrates
Wang, Cheng-Yin
Fuentes-Hernandez, Canek
Liu, Jen-Chieh
Dindar, Amir
Choi, Sangmoo
Youngblood, Jeffrey P.
Moon, Robert J.
Kippelen, Bernard
ACS APPLIED MATERIALS & INTERFACES, 2015, 7 (08) : 4804 - 4808
[38] Low-distortion GaAs-based field effect transistors with InGaP channel layer for high-voltage operation
Hara, N
Nakasha, Y
Kikkawa, T
Takahashi, H
Joshin, K
Watanabe, Y
Tanaka, H
Takikawa, M
INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 63 - 66
[39] High mobility and low operation voltage organic field effect transistors by using polymer-gel dielectric and molecular doping
Kosemen, Zuhal Alpaslan
Kosemen, Arif
Ozturk, Sadullah
Cammkurbey, Betul
Yerli, Yusuf
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017, 66 : 207 - 211
[40] Bias-Stress-Stable Low-Voltage Organic Field-Effect Transistors with Ultrathin Polymer Dielectric on C Nanoparticles
Liu, Jie
Wang, Chen-Huan
Liu, Chang-Hai
Li, Qin-Liang
Gao, Xu
Wang, Sui-Dong
ADVANCED ELECTRONIC MATERIALS, 2016, 2 (04):

← 1 2 3 4 5 →