共 50 条
- [46] HIGH-MOBILITY ELECTRON GASES AND MODULATION-DOPED FIELD-EFFECT TRANSISTORS FABRICATED IN SI/SI1-XGEX BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03): : 1176 - 1178
- [47] Pure germanium epitaxial growth on thin strained silicon-germanium graded layers on bulk silicon substrate for high-mobility channel metal-oxide-semiconductor field-effect transistors Journal of Electronic Materials, 2006, 35 : 1607 - 1612
- [48] SELECTIVELY DOPED N-ALXGA1-XAS/GAAS HETEROSTRUCTURES WITH HIGH-MOBILITY TWO-DIMENSIONAL ELECTRON-GAS FOR FIELD-EFFECT TRANSISTORS .1. EFFECT OF PARALLEL CONDUCTANCE APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 33 (02): : 63 - 76
- [49] SELECTIVELY DOPED N-ALXGA1-XAS/GAAS HETEROSTRUCTURES WITH HIGH-MOBILITY TWO-DIMENSIONAL ELECTRON-GAS FOR FIELD-EFFECT TRANSISTORS .2. HOT-ELECTRON EFFECTS APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 33 (03): : 183 - 193