TMAH Soak process optimization with DNQ positive resist for Lift-Off applications

被引：4
|
作者：
Mullen, S [1 ]
Toukhy, M [1 ]
Lu, PH [1 ]
Dixit, S [1 ]
Sellers, P [1 ]
机构：
[1] Clariant Corp, Somerville, NJ 08876 USA
来源：
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XX, PTS 1 AND 2 | 2003年 / 5039卷
关键词：
soak; overhang; cusp; lift-off; surface inhibition; developer; photoresist; metal deposition; i-line;
D O I：
10.1117/12.485198
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Reduced developer soak rinse time and increased post exposure bake temperatures were found to be the most effective process variables in extending the resist overhang. An extended resist overhang of 0.7 mum can be obtained under extreme conditions. Less extreme conditions were found to be more optimum for improved resolution with adequate lift-off profiles. The optimized process for AZ(R) MIR(TM) 703 resist offers a range of options in resolution linearity, trench size bias, overhang and delta trench top - bottom width. Trench resolution of 0.2 mum is demonstrated in i-line regime.
引用
收藏
页码：1304 / 1311
页数：8
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