Strong Dependence of Magnetic Damping and Magnetization on Deposition Temperature in Highly Magnetostrictive NiZnAl Ferrite Thin Films

被引:2
|
作者
Du, Qin
Wang, Zhiguang [1 ]
Li, Yaojin
Ma, Ming
Wang, Wenli
Su, Wei
Wu, Jingen
Zhao, Yanan
Hu, Zhongqiang
Liu, Ming [1 ]
机构
[1] Xi An Jiao Tong Univ, Key Lab, Minist Educ, Elect Mat Res Lab, Xian 710049, Peoples R China
基金
中国国家自然科学基金;
关键词
Magnetostriction; Temperature; Lattices; Damping; Nickel; Iron; Temperature measurement; Cation distribution; ferromagnetic resonance (FMR); magnetic damping; nickel ferrites;
D O I
10.1109/TMAG.2021.3119050
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Zn/Al co-doped nickel ferrites (NZAFO) with ultralow magnetic damping and large magnetostriction are critically needed for use in tunable spintronic devices and dissipationless quantum computation. However, the growth of epitaxial NZAFO thin films with optimized properties is difficult due to their tendency to form anti-site defects and antiphase boundaries, even on isostructural spinel substrate. Here, growth temperature-dependent ferromagnetic resonance (FMR) and magnetization have been systematically investigated. The saturate magnetization and damping linewidth have decreased from 114 to 70 emu/cc and 321 to 12 Oe as deposition temperature increased from 500 degrees C to 650 degrees C, respectively. With further optimization of the film thickness, a minimum FMR linewidth of 7.5 Oe has been observed, only 1.74% of that of bulk form NZAFO materials. Further increasing of deposition temperature to 700 degrees C results in a dramatic increase in the magnetic coercive field and damping linewidth. The magnetostriction and magnetocrystalline anisotropy are relatively stable in a large temperature range. The strong dependence between magnetic properties and the deposition temperature has been explained in terms of cation redistribution and evaporation. The insulating ferrimagnetic NZAFO with ultralow microwave loss and strain tunable static and dynamic magnetic properties serve as a promising candidate to be used in various tunable electronic devices.
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页数:6
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