Establishment of Theoretical Model and Experiment of Abrasive Removal Depth with Consideration of the Chemical Reaction Effect of Slurry with Different Volume Concentrations and Exploration of the Effect on Chemical Mechanical Polishing of Silicon Wafer

The study combines the analytical model of the number of polishing times with the theory of specific downward force energy (SDFE) so as to establish a theoretical model of abrasive removal depth of silicon wafer with consideration of the chemical reaction effect of slurry with different volume concentrations for the use of cross-groove pattern polishing pad. Through experimental results of atomic force microscopy (AFM), we calculate the SDFE values of silicon Wafer affected by the chemical reaction of slurry with different volume concentrations, establish a theoretical equation of the thickness of chemical reaction layer affected by slurry with different volume concentrations, and calculate the thicknesses of chemical reaction layer of silicon wafer affected by slurry with different volume concentrations. After establishing the theoretical model of abrasive removal depth, the paper conducts simulation and experiment of average abrasive removal depths of silicon wafer affected by the chemical reaction of slurry with different volume concentrations. The paper makes comparison of simulation and experiment results of the average abrasive removal depths, and finds that the average "difference is around 4.00%. Therefore, the theoretical model of abrasive removal depth of chemical mechanical polishing (CMP) silicon wafer affected by the chemical reaction of slurry with different volume concentrations, as established by the paper, is considered reasonable. The study also uses simulation results to analyze the surface morphology of silicon wafer polished by slurry with different volume concentrations, and uses AFM constant force mode to make measurement at multiple positions on the silicon wafer surface in order to obtain the average surface roughness at each position. It is revealed that when comparing the cross-sectional form of silicon wafer after experimental polishing with the surface morphology obtained in simulation, the simulated result of the surface morphology trend of silicon wafer is qualitatively proved to be reasonable and acceptable.