Combined atomic force microscope and electron-beam lithography used for the fabrication of variable-coupling quantum dots

被引：15

作者：

Rogge, MC ^{[1
]}

Fühner, C

Keyser, UF

Haug, RJ

Bichler, M

Abstreiter, G

Wegscheider, W

机构：

[1] Univ Hannover, Inst Festkorperphys, D-30167 Hannover, Germany

[2] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[3] Univ Regensburg, D-93040 Regensburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 06期

关键词：

D O I：

10.1063/1.1599972

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have combined direct nanofabrication by local anodic oxidation with conventional electron-beam lithography to produce a parallel double quantum dot based on a GaAs/AlGaAs heterostructure. The combination of both nanolithography methods allows fabrication of robust in-plane gates and Cr/Au top-gate electrodes on the same device for optimal controllability. This is illustrated by the tunability of the interdot coupling in our device. We describe our fabrication and alignment scheme in detail and demonstrate the tunability in low-temperature transport measurements. (C) 2003 American Institute of Physics.

引用

页码：1163 / 1165

页数：3

共 37 条

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