Role of irradiation-induced defects on SiC dissolution in hot water

被引：30
|
作者：
Kondo, Sosuke [1 ]
Mouri, Shinichiro [1 ]
Hyodo, Yoshihiro [2 ]
Hinoki, Tatsuya [1 ]
Kano, Fumihisa [2 ]
机构：
[1] Kyoto Univ, Inst Adv Energy, Uji, Kyoto 6110011, Japan
[2] Toshiba Co Ltd, Power & Ind Syst Res & Dev Ctr, Yokohama, Kanagawa 2358523, Japan
来源：
CORROSION SCIENCE | 2016年 / 112卷
关键词：
Ceramic; SEM; Ion implantation; High temperature corrosion; Reactor conditions; IMPLANTED SILICON-CARBIDE; ELECTRON-SPIN-RESONANCE; HYDROTHERMAL CORROSION; FORCE MICROSCOPY; SEMICONDUCTORS; TEMPERATURE; BEHAVIOR;
D O I：
10.1016/j.corsci.2016.08.007
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An enhancement of the dissolution of high-purity 3C-SiC in hot water (320 degrees C, 20 MPa: relevant to the light-water reactor coolant condition) is demonstrated after 5.1 MeV Si-ion irradiation. Optical spectrometry and Kelvin force microscopy revealed the creation of interband-defect localized states within the bandgap. The dissolution rate was found to be dependent on the irradiation fluence, irradiation-induced volume expansion, and the photoluminescence quenching. An annealing study showed prevention of irradiation-enhanced dissolution with the recovery of most defects. These results show that the dissolution rates of irradiated SiC are increased with the population of irradiation-induced defects. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：402 / 407
页数：6
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