AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy (vol 98, 081110, 2011)

被引：0
|
作者：
Liao, Yitao
Thomidis, Christos
Kao, Chen-kai
Moustakas, Theodore D. [1 ]
机构：
[1] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 02期
关键词：
D O I：
10.1063/1.3675971
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页数：1
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