The RF/Microwave performance of the planar interdigitated varactors based on Ba0.6Sr0.4TiO3/Ba0.4Sr0.6TiO3 double-layer thin film

被引：0
|
作者：
Zhang, JW [1 ]
Zhang, HL [1 ]
Lu, SG [1 ]
Xu, ZK [1 ]
Chen, KJ [1 ]
机构：
[1] Peking Univ, Inst Microelect, Natl Key Lab Nano Micro Fabr Technol, Beijing 100871, Peoples R China
来源：
ISTM/2005: 6th International Symposium on Test and Measurement, Vols 1-9, Conference Proceedings | 2005年
关键词：
BST thin film; planar interdigitated varactor; RF/microwave; MOS VARACTORS; CAPACITORS;
D O I：
暂无
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
In this paper, the RF/microwave characterization of planar interdigitated varactors (PIVs), which are based on Ba0.6Sr0.4TiO3/ Ba0.4Sr0.6TiO3 double-layer thin film deposited by PLD on the MgO substrate, was investigated. Its tunability was about 60% (2.5:1) with 1 mu m finger spacing and 3 mu m finger width at 40V dc bias voltage. The Q factor of our PIV reduced with frequency at 0V dc bias voltage and was higher than 14 when the frequency was up to 10 GHz.
引用
收藏
页码：7240 / 7242
页数：3
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