MOSFETs on (110) C-H Diamond: ALD Al2O3/Diamond Interface Analysis and High Performance Normally-OFF Operation Realization

被引：27
|
作者：
Liu, Benjian [1 ,2 ]
Bi, Te [1 ]
Fu, Yu [1 ]
Kudara, Ken [1 ]
Imanishi, Shoichiro [1 ]
Liu, Kang [2 ]
Dai, Bing [2 ]
Zhu, Jiaqi [2 ]
Kawarada, Hiroshi [1 ]
机构：
[1] Waseda Univ, Fac Sci & Engn, Shinjuku Ku, Tokyo 1698555, Japan
[2] Harbin Inst Technol, Natl Key Lab Sci & Technol Adv Composites Special, Harbin 150080, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2022年 / 69卷 / 03期
关键词：
Atomic layer deposition (ALD) Al2O3; conduction mechanism; diamond; FET; normally-OFF; POWER-DENSITY; CASCODE; AL2O3; FET;
D O I：
10.1109/TED.2022.3147152
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Hole concentration of 2-D hole gas (2DHG) on (110) diamond is higher than that on other faces, making it the best choice for power device application. Detailed analysis of atomic layer deposition (ALD) Al2O3/(110) C-H diamond interface structure is of vital importance. MOSFETs with thin (10 nm) and thick (100 nm) ALD Al2O3 layer were made in this study. The microstructure of Al2O3 on (110) C-H diamond was analyzed. Abrupt interface of ALD Al2O3/C-H diamond was observed through high resolution transmission electron microscope (HRTEM). Cascode structure using diamond MOSFETs and enhancement mode silicon MOSFET is fabricated and its high performance is confirmed.
引用
收藏
页码：949 / 955
页数：7
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