Peculiarities of Linear Thermal Expansion of CuInS2 Single Crystals

被引：4

作者：

Nagaoka, Akira ^{[1
]}

Yoshino, Kenji ^{[1
]}

Taniyama, Tomoyasu ^{[2
]}

Miyake, Hideto ^{[3
]}

机构：

[1] Miyazaki Univ, Dept Elect & Elect Engn, Miyazaki 892192, Japan

[2] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2268503, Japan

[3] Mie Univ, Dept Elect & Elect Engn, Tsu, Mie 5148507, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 05期

关键词：

ANOMALOUS TEMPERATURE-DEPENDENCE; TRAVELING HEATER METHOD; CHALCOPYRITE SEMICONDUCTORS; ENERGY-GAP; GROWTH; AGGASE2; PHOTOREFLECTANCE;

D O I：

10.1143/JJAP.50.05FB04

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

CuInS2 single crystals were grown by a traveling heater method, which is one of the solution growth techniques. The temperature dependence of the X-ray diffraction of CuInS2 was determined between 10 and 300 K. The lattice constant of the a-axis decreased and that of the c-axis increased with increasing temperature. The linear thermal expansion of the c-axis calculated from the lattice constants decreased from 10 to 100 K. (C) 2011 The Japan Society of Applied Physics

引用

页数：2

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