Evidence for self-mode-locking in p-Ge laser emission

被引：20

作者：

Muravjov, AV ^{[1
]}

Strijbos, RC

Fredricksen, CJ

Weidner, H

Trimble, W

Pavlov, SG

Shastin, VN

Peale, RE

机构：

[1] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA

[2] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603600, Russia

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 21期

关键词：

D O I：

10.1063/1.122664

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Investigations of the dynamics of the far-infrared p-Ge laser emission reveal strong periodic soliton-like intensity spikes with less than 100 ps duration. We interpret these spikes as self-mode-locking of p-Ge laser modes. The effect becomes more pronounced when a GaAs/AlGaAs/InGaAs quantum well structure on a semi-insulating GaAs substrate is inserted into the laser cavity. (C) 1998 American Institute of Physics. [S0003-6951(98)01647-7].

引用

页码：3037 / 3039

页数：3

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