Evidence for self-mode-locking in p-Ge laser emission

被引：20
|
作者：
Muravjov, AV [1 ]
Strijbos, RC
Fredricksen, CJ
Weidner, H
Trimble, W
Pavlov, SG
Shastin, VN
Peale, RE
机构：
[1] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA
[2] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603600, Russia
来源：
APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 21期
关键词：
D O I：
10.1063/1.122664
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Investigations of the dynamics of the far-infrared p-Ge laser emission reveal strong periodic soliton-like intensity spikes with less than 100 ps duration. We interpret these spikes as self-mode-locking of p-Ge laser modes. The effect becomes more pronounced when a GaAs/AlGaAs/InGaAs quantum well structure on a semi-insulating GaAs substrate is inserted into the laser cavity. (C) 1998 American Institute of Physics. [S0003-6951(98)01647-7].
引用
收藏
页码：3037 / 3039
页数：3
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