Study on spin dependent tunneling and Coulomb blockade in granular systems with restricted tunneling paths

被引：11

作者：

Mitani, S ^{[1
]}

Takanashi, K ^{[1
]}

Yakushiji, K ^{[1
]}

Chiba, J ^{[1
]}

Fujimori, H ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 84卷 / 1-2期

关键词：

Coulomb blockade; focused ion beam etching; granular film; scanning tunneling microscopy; single electron tunneling; tunnel magnetoresistance;

D O I：

10.1016/S0921-5107(01)00582-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We describe the microfabrication process of a granular nanobridge structure consisting of electrodes separated by a nanometer-sized gap in which a thin insulating Co-Al-O granular film is filled, and discuss the observed Coulomb blockade with a clear threshold voltage (V-th) and the enhanced tunnel magnetoresistance of about 30% at a voltage slightly above V-th. Recent results of our scanning tunneling microscopy studies to clarify the topographic features and single electron tunneling phenomena on the surface of Co-Al-O granular films are also presented. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：120 / 125

页数：6

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