Study on spin dependent tunneling and Coulomb blockade in granular systems with restricted tunneling paths

被引：11
|
作者：
Mitani, S [1 ]
Takanashi, K [1 ]
Yakushiji, K [1 ]
Chiba, J [1 ]
Fujimori, H [1 ]
机构：
[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 84卷 / 1-2期
关键词：
Coulomb blockade; focused ion beam etching; granular film; scanning tunneling microscopy; single electron tunneling; tunnel magnetoresistance;
D O I：
10.1016/S0921-5107(01)00582-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We describe the microfabrication process of a granular nanobridge structure consisting of electrodes separated by a nanometer-sized gap in which a thin insulating Co-Al-O granular film is filled, and discuss the observed Coulomb blockade with a clear threshold voltage (V-th) and the enhanced tunnel magnetoresistance of about 30% at a voltage slightly above V-th. Recent results of our scanning tunneling microscopy studies to clarify the topographic features and single electron tunneling phenomena on the surface of Co-Al-O granular films are also presented. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：120 / 125
页数：6
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