Stark effect in single and vertically coupled InAs/GaAs self-assembled quantum dots

被引：11
|
作者：
Sobolev, MM [1 ]
Ustinov, VM [1 ]
Cirlin, GE [1 ]
机构：
[1] RAS, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
PHYSICA B-CONDENSED MATTER | 2003年 / 340卷
关键词：
GaAs; quantum dot; defects; stark effect;
D O I：
10.1016/j.physb.2003.09.178
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Hole emission from single and vertically coupled quantum dots (SQD and VCQD) in InAs/GaAs p-n heterostructures under varied reverse bias and the influence exerted on this process by the Coulomb interaction between the quantum dots and point defects situated near the dots has been studied by capacitance-voltage (C-V) and deep-level transient spectroscopes. Levels of the ground and excited states of the VCQD have been revealed. The electric-field-induced shift of the energy levels of these states is attributed to the quantum-confined Stark effect for SQD and VCQD. The Stark effect in the VCQD structure is stronger than that in the SQD. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：1103 / 1107
页数：5
相关论文
共 50 条
  • [21] Quantum Confined Stark Effect in Single Self-Assembled CdTe Quantum Dots
    Klopotowski, L.
    Kudelski, A.
    Wojnar, P.
    Tartakovskii, A. I.
    Skolnick, M. S.
    Krebs, O.
    Voisin, P.
    Karczewski, G.
    Wojtowicz, T.
    PHYSICS OF SEMICONDUCTORS, 2009, 1199 : 347 - +
  • [22] Theoretical calculation of quantum-confined stark effect in InAs/GaAs self-assembled quantum
    Guo, RH
    Shi, HY
    Sun, XD
    NANOPHOTONICS, NANOSTRUCTURE, AND NANOMETROLOGY, 2005, 5635 : 313 - 324
  • [23] Transport properties of a single pair of coupled self-assembled InAs quantum dots
    Ota, T
    Hatano, T
    Tarucha, S
    Song, HZ
    Nakata, Y
    Miyazawa, T
    Ohshima, T
    Yokoyama, N
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 19 (1-2): : 210 - 214
  • [24] Self-assembled InAs/GaAs quantum dots and quantum dot laser
    Wang, ZG
    Liu, FQ
    Liang, JB
    Xu, B
    SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY, 2000, 43 (08): : 861 - 870
  • [25] Polaron relaxation in InAs/GaAs self-assembled quantum dots
    Sauvage, S
    Boucaud, P
    Bras, F
    Fishman, G
    Lobo, RPSM
    Glotin, F
    Prazeres, R
    Ortega, JM
    Gérard, JM
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2003, 238 (02): : 254 - 257
  • [26] Self-assembled InAs/GaAs quantum dots and quantum dot laser
    王占国
    刘峰奇
    梁基本
    徐波
    Science China Mathematics, 2000, (08) : 861 - 870
  • [27] Morphology of self-assembled InAs quantum dots on GaAs(001).
    Arciprete, F
    Patella, F
    Fanfoni, M
    Nufris, S
    Placidi, E
    Schiumarini, D
    Balzarotti, A
    SELF-ASSEMBLY PROCESSES IN MATERIALS, 2002, 707 : 179 - 184
  • [28] TEM study of InAs self-assembled quantum dots in GaAs
    Müller, E
    Ribeiro, E
    Heinzel, T
    Ensslin, K
    Medeiros-Ribeiro, G
    Petroff, PM
    THIN FILMS EPITAXIAL GROWTH AND NANOSTRUCTURES, 1999, 79 : 38 - 41
  • [29] Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots
    Fry, PW
    Itskevich, IE
    Parnell, SR
    Finley, JJ
    Wilson, LR
    Schumacher, KL
    Mowbray, DJ
    Skolnick, MS
    Al-Khafaji, M
    Cullis, AG
    Hopkinson, M
    Clark, JC
    Hill, G
    PHYSICAL REVIEW B, 2000, 62 (24) : 16784 - 16791
  • [30] Annealing effects of self-assembled InAs/GaAs quantum dots
    Inst of Semiconductors, CAS, Beijing, China
    Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves, 1997, 16 (06): : 455 - 458
12345