Near Bandgap Excitation Inhibits the Interfacial Electron Transfer of Semiconductor/Cocatalyst

被引:27
|
作者
Xue, Jiawei [1 ]
Fujitsuka, Mamoru [1 ]
Majima, Tetsuro [1 ]
机构
[1] Osaka Univ, Osaka, Japan
关键词
semiconductor/cocatalyst; above/near bandgap excitation; electron trapping; interfacial electron transfer; H-2; evolution;
D O I
10.1021/acsami.9b20247
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Understanding the ultrafast interfacial electron transfer (IET) process is essential for establishing the structure-property relationship of the semiconductor/cocatalyst system for photocatalytic H-2 evolution. However, the IET kinetics for the near bandgap excitation has not been reported. Herein, we investigate the IET kinetics of g-C3N4/Pt as a semiconductor/cocatalyst prototype by femtosecond time-resolved diffuse reflectance spectroscopy. We find that the near bandgap excitation of g-C3N4 inhibits the IET of g-C3N4/Pt due to electron deep trapping, resulting in a markedly decreased apparent quantum efficiency for photocatalytic H-2 evolution. This work complements the kinetic understanding for the photocatalytic mechanism of the semiconductor/cocatalyst system in its whole light absorption range.
引用
收藏
页码:5920 / 5924
页数:5
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