Dielectric-Modulated Biosensing with Ultrahigh-Frequency-Operated Graphene Field-Effect Transistors

被引:22
|
作者
Zhang, Xiaoyan [1 ,2 ]
Liu, Tingxian [2 ]
Boyle, Aimee [2 ]
Bahreman, Azadeh [2 ]
Bao, Lei [1 ]
Jing, Qiushi [1 ]
Xue, Honglei [1 ]
Kieltyka, Roxanne [2 ]
Kros, Alexander [2 ]
Schneider, Gregory F. [2 ]
Fu, Wangyang [1 ]
机构
[1] Tsinghua Univ, Sch Mat Sci & Engn, 1 Tsinghua Yuan, Beijing 100084, Peoples R China
[2] Leiden Univ, Leiden Inst Chem, Fac Sci, Einsteinweg 55, NL-2333 CC Leiden, Netherlands
基金
欧洲研究理事会; 欧盟地平线“2020”; 中国国家自然科学基金;
关键词
dielectric modulation; field effect; graphene biosensors; ionic screening; ultrahigh frequency; DEBYE-SCREENING LENGTH; POLYELECTROLYTE MULTILAYERS; COILED-COILS; PERFORMANCE;
D O I
10.1002/adma.202106666
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Owing to their excellent electrical properties and chemical stability, graphene field-effect transistors (Gr-FET) are extensively studied for biosensing applications. However, hinging on surface interactions of charged biomolecules, the sensitivity of Gr-FET is hampered by ionic screening under physiological conditions with high salt concentrations up to frequencies as high as MHz. Here, an electrolyte-gated Gr-FET in reflectometry mode at ultrahigh frequencies (UHF, around 2 GHz), where the ionic screening is fully cancelled and the dielectric sensitivity of the device allows the Gr-FET to directly function in high-salt solutions, is configured. Strikingly, by simultaneous characterization using electrolyte gating and UHF reflectometry, the developed graphene biosensors offer unprecedented capability for real-time monitoring of dielectric-specified biomolecular/cell interactions/activities, with superior limit of detection compared to that of previously reported nanoscale high-frequency sensors. These achievements highlight the unique potential of ultrahigh-frequency operation for unblocking the true potential of graphene biosensors for point-of-care diagnostic.
引用
收藏
页数:8
相关论文
共 50 条
  • [41] Chemical Vapour Deposition Graphene Radio-Frequency Field-Effect Transistors
    Ma Peng
    Jin Zhi
    Guo Jian-Nan
    Pan Hong-Liang
    Liu Xin-Yu
    Ye Tian-Chun
    Wang Hong
    Wang Guan-Zhong
    CHINESE PHYSICS LETTERS, 2012, 29 (05)
  • [42] High-Frequency Limits of Graphene Field-Effect Transistors with Velocity Saturation
    Wilmart, Quentin
    Boukhicha, Mohamed
    Graef, Holger
    Mele, David
    Palomo, Jose
    Rosticher, Michael
    Taniguchi, Takashi
    Watanabe, Kenji
    Bouchiat, Vincent
    Baudin, Emmanuel
    Berroir, Jean-Marc
    Bocquillon, Erwann
    Feve, Gwendal
    Pallecchi, Emiliano
    Placais, Bernard
    APPLIED SCIENCES-BASEL, 2020, 10 (02):
  • [43] Assessment of high-frequency performance limits of graphene field-effect transistors
    Chauhan, Jyotsna
    Guo, Jing
    NANO RESEARCH, 2011, 4 (06) : 571 - 579
  • [44] Delay Analysis of Graphene Field-Effect Transistors
    Wang, Han
    Hsu, Allen
    Lee, Dong Seup
    Kim, Ki Kang
    Kong, Jing
    Palacios, Tomas
    IEEE ELECTRON DEVICE LETTERS, 2012, 33 (03) : 324 - 326
  • [45] Simulation of graphene nanoribbon field-effect transistors
    Fiori, Gianluca
    Iannaccone, Giuseppe
    IEEE ELECTRON DEVICE LETTERS, 2007, 28 (08) : 760 - 762
  • [46] Assessment of high-frequency performance limits of graphene field-effect transistors
    Jyotsna Chauhan
    Jing Guo
    Nano Research, 2011, 4 : 571 - 579
  • [47] Now Hear This: Low-Frequency Noise in Graphene Field-Effect Transistors
    不详
    ACS NANO, 2011, 5 (10) : 7694 - 7694
  • [48] Graphene Field-Effect Transistors with Ferroelectric Gating
    Zheng, Yi
    Ni, Guang-Xin
    Toh, Chee-Tat
    Tan, Chin-Yaw
    Yao, Kui
    Oezyilmaz, Barbaros
    PHYSICAL REVIEW LETTERS, 2010, 105 (16)
  • [49] Modeling Techniques for Graphene Field-effect Transistors
    Lu, Haiyan
    Wu, Yun
    Huo, Shuai
    Xu, Yuehang
    Kong, Yuechan
    Chen, Tangshen
    2015 IEEE INTERNATIONAL CONFERENCE ON COMMUNICATION PROBLEM-SOLVING (ICCP), 2015, : 373 - 376
  • [50] Hysteresis reversion in graphene field-effect transistors
    Liao, Zhi-Min
    Han, Bing-Hong
    Zhou, Yang-Bo
    Yu, Da-Peng
    JOURNAL OF CHEMICAL PHYSICS, 2010, 133 (04):