Room-temperature Bloch oscillations and interminiband Zener tunneling in a GaAs-based narrow-minigap superlattice

被引:6
|
作者
Unuma, Takeya [1 ]
Itagaki, Yuto [1 ]
Asakura, Soichiro [1 ]
机构
[1] Nagaoka Univ Technol, Dept Elect Elect & Informat Engn, Nagaoka, Niigata 9402188, Japan
关键词
WANNIER-STARK LADDERS; INDUCED DELOCALIZATION; TIME ORIGIN; TRANSPORT; ELECTRONS; EMISSION; BREAKDOWN;
D O I
10.35848/1882-0786/ac114f
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigate peculiar Bloch oscillations and interminiband Zener tunneling in a GaAs-based narrow-minigap superlattice up to room temperature, by using terahertz emission spectroscopy under dc bias electric fields. The Bloch oscillations observed previously with a pi/2 phase shift at 10 K under relatively low bias fields are found to survive even at 300 K, where thermal energy kT exceeds the relevant minigap (k: Boltzmann constant, T: temperature). Furthermore, the interminiband Zener tunneling under high bias fields leads to a monocyclic terahertz signal with a temperature-dependent subsequent bumpy tail, indicating its occurrence at a few different occasions for Bloch oscillating electrons.
引用
收藏
页数:4
相关论文
共 15 条
  • [1] Dephasing of terahertz Bloch oscillations in a GaAs-based narrow-minigap superlattice excited by tunable pump photon energy
    Unuma, Takeya
    Abe, Ryota
    APPLIED PHYSICS EXPRESS, 2021, 14 (05)
  • [2] RESONANT TUNNELING OSCILLATIONS IN A GAAS-ALXGA1-XAS HETEROSTRUCTURE AT ROOM-TEMPERATURE
    SHEWCHUK, TJ
    CHAPIN, PC
    COLEMAN, PD
    KOPP, W
    FISCHER, R
    MORKOC, H
    APPLIED PHYSICS LETTERS, 1985, 46 (05) : 508 - 510
  • [3] 1.3 μm room-temperature GaAs-based quantum-dot laser
    Huffaker, DL
    Park, G
    Zou, Z
    Shchekin, OB
    Deppe, DG
    APPLIED PHYSICS LETTERS, 1998, 73 (18) : 2564 - 2566
  • [4] Room-temperature operation of GaAs-based quantum cascade lasers processed as ridge and microcavity waveguides
    Anders, S
    Schrenk, W
    Pflügl, C
    Gornik, E
    Strasser, G
    Becker, C
    Sirtori, C
    IEE PROCEEDINGS-OPTOELECTRONICS, 2003, 150 (04): : 282 - 283
  • [5] Capacitive response and room-temperature terahertz gain of a Wannier-Stark ladder system in GaAs-based superlattices
    Naka, Akiyoshi
    Hirakawa, Kazuhiko
    Unuma, Takeya
    APPLIED PHYSICS EXPRESS, 2016, 9 (11)
  • [6] MILLIMETER-BAND OSCILLATIONS BASED ON RESONANT TUNNELING IN A DOUBLE-BARRIER DIODE AT ROOM-TEMPERATURE
    BROWN, ER
    SOLLNER, TCLG
    GOODHUE, WD
    PARKER, CD
    APPLIED PHYSICS LETTERS, 1987, 50 (02) : 83 - 85
  • [7] Design and simulation of deep-well GaAs-based quantum cascade lasers for 6.7 μm room-temperature operation
    Gao, X.
    D'Souza, M.
    Botez, D.
    Knezevic, I.
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (11)
  • [8] Design and simulation of deep-well GaAs-based quantum cascade lasers for 6.7 μm room-temperature operation
    Gao, X.
    D'Souza, M.
    Botez, D.
    Knezevic, I.
    Journal of Applied Physics, 2007, 102 (11):
  • [9] Room-temperature continuous-wave operation of GaAs-based vertical cavity surface emitting laser based on p-type GaAs/air mirror
    Mo, Q
    Chen, H
    Huang, Z
    Shchekin, OB
    Cao, C
    Lipson, S
    Deppe, DG
    ELECTRONICS LETTERS, 2003, 39 (06) : 525 - 526
  • [10] Room-temperature, mid-infrared (λ=4.7 μm) electroluminescence from single-stage intersubband GaAs-based edge emitters
    Xu, DP
    Mirabedini, A
    D'Souza, M
    Li, S
    Botez, D
    Lyakh, A
    Shen, YJ
    Zory, P
    Gmachl, C
    APPLIED PHYSICS LETTERS, 2004, 85 (20) : 4573 - 4575