Room-temperature continuous-wave operation of GaAs-based vertical cavity surface emitting laser based on p-type GaAs/air mirror

被引：1
|
作者：
Mo, Q [1 ]
Chen, H [1 ]
Huang, Z [1 ]
Shchekin, OB [1 ]
Cao, C [1 ]
Lipson, S [1 ]
Deppe, DG [1 ]
机构：
[1] Univ Texas, Dept Elect & Comp Engn, Ctr Microelect Res, Austin, TX 78712 USA
来源：
ELECTRONICS LETTERS | 2003年 / 39卷 / 06期
关键词：
D O I：
10.1049/el:20030309
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An electrically pumped GaAs-based vertical cavity surface emitting laser is demonstrated that uses an upper p-type GaAs/air-gap distributed Bragg reflector. The air gaps are realised by selective removal of AlGaAs sacrificial layers. Low threshold at room temperature is obtained using this fabrication scheme.
引用
收藏
页码：525 / 526
页数：2
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