Preparation and characterization of octadecylsilane monolayers on indium-tin oxide (ITO) surfaces

被引：57

作者：

Markovich, I ^{[1
]}

Mandler, D ^{[1
]}

机构：

[1] Hebrew Univ Jerusalem, Dept Inorgan & Analyt Chem, IL-91904 Jerusalem, Israel

来源：

JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 2001年 / 500卷 / 1-2期

关键词：

indium-tin oxide electrode; octadecylsilane; self-assembled monolayers;

D O I：

10.1016/S0022-0728(00)00458-7

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The preparation and characterization of octadecylsilane, C-18, monolayers on indium-tin oxide (ITO) have been studied carefully. A reproducible procedure was developed for the formation of C-18/ITO employing octadecyltrimethoxysilane (OTMS) as a monomer. The films were studied by means of electrochemistry, wettability, infrared and atomic force microscopy. All these measurements provide evidence for the formation of a disorganized, 'brush-type' monolayer with a maximum surface fractional coverage of 0.90 +/- 0.04. The surface coverage can be controlled through the silanization time. The applications and implications of such disorganized monolayers in electroanalytical chemistry are discussed. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：453 / 460

页数：8

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