Erbium-Doped Fiber Dual-Wavelength Mode Locked Laser With Few-Layer NiPS3

In recent years, as optical modulator materials, two-dimensional (2D) materials attracted much attention for mode-locking pulse generating. However, some 2D materials like graphene have no band gap, leading to weak light absorption, while other 2D materials such as black phosphorus have poor stability, which may affect the continuity of the laser. As a kind of new 2D ternary layered material, NiPS3 can exhibit more novel electrical, optical and magnetic properties compared with those unary and binary 2D layered materials because of higher chemical diversity and structural complexity. In this work, we proposed and demonstrated dual-wavelength mode-locked erbium-doped all-fiber laser (EDFL) by utilizing the few-layer NiPS3 as the saturable absorber (SA). The total length of the laser cavity was about 40 m with a 20m-long single mode fiber integrated. The SA was integrated into the EDFL by sandwiching it between two fiber ferrules. In stable dual-wavelength mode-locked operation, the pulse was generated at 1563.8 nm and 1564.5 nm with a repetition rate of 5.117 MHz with signal-to-noise ratio (SNR) of 51.70 dB. Meanwhile, the highest peak power of 7.46 nJ corresponded to the maximum output power of 1.54 mW. Our experiments validated that the few-layer NiPS3 can be utilized as a SA to generate stable all-fiber pulsed laser for the first time. More meaningfully, the fabrication of NiPS3 in this work would allow the generation of mode-locked pulse, which expands two-dimensional (2D) materials application in ultrafast pulse generation.