Resonant excitonic emission of a single quantum dot in the Rabi regime

被引：47

作者：

Melet, R. ^{[1
]}

Voliotis, V. ^{[1
,2
]}

Enderlin, A. ^{[1
]}

Roditchev, D. ^{[1
]}

Wang, X. L. ^{[3
]}

Guillet, T. ^{[4
]}

Grousson, R. ^{[1
]}

机构：

[1] Univ Paris 06, Inst Nanosci Paris, CNRS, UMR 7588, F-75015 Paris, France

[2] Univ Evry Val Essonne, F-91025 Evry, France

[3] Natl Inst Adv Ind Sci & Technol, Nanotechnol Res Inst, Tsukuba, Ibaraki 3058568, Japan

[4] Univ Montpellier 2, Etud Semicond Grp, F-34095 Montpellier 05, France

来源：

PHYSICAL REVIEW B | 2008年 / 78卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.78.073301

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on coherent resonant emission of the fundamental exciton state in a single semiconductor GaAs quantum dot. A resonant regime with picosecond laser excitation is realized by embedding the quantum dots in a one-dimensional waveguiding structure. As the pulse intensity is increased, Rabi oscillation is observed up to three periods. The Rabi regime is achieved owing to an enhanced light-matter coupling in the waveguide but with different dynamics with respect to usual cavity quantum electrodynamics. The resonant control of the quantum dot fundamental transition opens new possibilities in quantum state manipulation and quantum optics experiments in condensed-matter physics.

引用

页数：4

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