AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy

被引：20

作者：

Skierbiszewski, Czeslaw ^{[1
,2
]}

Siekacz, Marcin ^{[1
,2
]}

Turski, Henryk ^{[1
]}

Muziol, Grzegorz ^{[1
]}

Sawicka, Marta ^{[1
,2
]}

Feduniewicz-Zmuda, Anna ^{[1
]}

Cywinski, Grzegorz ^{[1
]}

Cheze, Caroline ^{[2
]}

Grzanka, Szymon ^{[1
]}

Perlin, Piotr ^{[1
,2
]}

Wisniewski, Przemyslaw ^{[1
,2
]}

Wasilewski, Zbigniew R. ^{[3
]}

Porowski, Sylwester ^{[1
]}

机构：

[1] Polish Acad Sci, Inst High Pressure Phys, PL-01142 Warsaw, Poland

[2] TopGaN Ltd, PL-01142 Warsaw, Poland

[3] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 02期

关键词：

INGAN LASER;

D O I：

10.1143/APEX.5.022104

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room-temperature continuous wave lasing at 432nm with a threshold current of 7.6 kA/cm(2) for nitride-based laser diodes (LDs) grown by plasma-assisted molecular beam epitaxy is reported. The diodes were grown on c-plane GaN substrates with a threading dislocation density of 5 x 10(7) cm(-2). We used a simplified laser structure design with GaN claddings where the optical modes were confined by the thick 120nm In0.08Ga0.92N waveguide. Our LDs show a high optical output power of 130mW, a differential gain of 0.5 W/A, and a lifetime of 50 h. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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