Atomic Electrostatic Maps of Point Defects in MoS2

被引:21
|
作者
Calderon, Sebastian, V [1 ]
Ferreira, Rafael V. [1 ,2 ,3 ]
Taneja, Deepyanti [4 ]
Raghavendrarao, Jayanth T. [4 ]
Zhou, Langyan [4 ]
Ribeiro, Ricardo M. [1 ,5 ]
Akinwande, Deji [4 ,6 ]
Ferreira, Paulo J. [1 ,2 ,3 ,6 ]
机构
[1] Int Iberian Nanotechnol Lab, INL, P-4715330 Braga, Portugal
[2] Univ Lisbon, Dept Mech Engn, Inst Super Tecn, P-1049001 Lisbon, Portugal
[3] Univ Lisbon, IDMEC, Inst Super Tecn, P-1049001 Lisbon, Portugal
[4] Univ Texas Austin, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78758 USA
[5] Univ Minho, Dept & Ctr Phys, P-4710057 Braga, Portugal
[6] Univ Texas Austin, Mat Sci & Engn Program, Austin, TX 78712 USA
基金
美国国家科学基金会;
关键词
monolayer molybdenum disulfide; point defects; atomic resolution imaging; differential phase contrast; STEM;
D O I
10.1021/acs.nanolett.1c02334
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In this study, we use differential phase contrast images obtained by scanning transmission electron microscopy combined with computer simulations to map the atomic electrostatic fields of MoS2 monolayers and investigate the effect of sulfur monovacancies and divancancies on the atomic electric field and total charge distribution. A significant redistribution of the electric field in the regions containing defects is observed, with a progressive decrease in the strength of the projected electric field for each sulfur atom removed from its position. The electric field strength at the sulfur monovacancy sites is reduced by approximately 50% and nearly vanishes at the divacancy sites, where it drops to around 15% of the original value, demonstrating the tendency of these defects to attract positively charged ions or particles. In addition, the absence of the sulfur atoms leads to an inversion in the polarity of the total charge distribution in these regions.
引用
收藏
页码:10157 / 10164
页数:8
相关论文
共 50 条
  • [1] Electrostatic Screening of Charged Defects in Monolayer MoS2
    Atallah, T. L.
    Wang, J.
    Bosch, M.
    Seo, D.
    Burke, R. A.
    Moneer, O.
    Zhu, Justin
    Theibault, M.
    Brus, L. E.
    Hone, J.
    Zhu, X. -Y.
    JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2017, 8 (10): : 2148 - 2152
  • [2] Nature of point defects in monolayer MoS2 and the MoS2/Au(111) heterojunction
    Anvari, Roozbeh
    Wang, Wennie
    JOURNAL OF APPLIED PHYSICS, 2024, 135 (17)
  • [3] Impact of intrinsic atomic defects on the electronic structure of MoS2 monolayers
    Santosh, K. C.
    Longo, Roberto C.
    Addou, Rafik
    Wallace, Robert M.
    Cho, Kyeongjae
    NANOTECHNOLOGY, 2014, 25 (37)
  • [4] Detailed Atomic Reconstruction of Extended Line Defects in Monolayer MoS2
    Wang, Shanshan
    Lee, Gun-Do
    Lee, Sungwoo
    Yoon, Euijoon
    Warner, Jamie H.
    ACS NANO, 2016, 10 (05) : 5419 - 5430
  • [5] Atomic Structure and Dynamics of Defects in 2D MoS2 Bilayers
    Zhou, Si
    Wang, Shanshan
    Li, Huashan
    Xu, Wenshuo
    Gong, Chuncheng
    Grossman, Jeffrey C.
    Warner, Jamie H.
    ACS OMEGA, 2017, 2 (07): : 3315 - 3324
  • [6] Reactivity Enhancement and Fingerprints of Point Defects on a MoS2 Monolayer Assessed by ab Initio Atomic Force Microscopy
    Gonzalez, C.
    Dappe, Y. J.
    Biel, B.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2016, 120 (30): : 17115 - 17126
  • [7] Remarkable suppression of thermal conductivity by point defects in MoS2 nanoribbons
    Wang, Yongchun
    Zhang, Kaiwang
    Xie, Guofeng
    APPLIED SURFACE SCIENCE, 2016, 360 : 107 - 112
  • [8] From point to extended defects in two-dimensional MoS2: Evolution of atomic structure under electron irradiation
    Komsa, Hannu-Pekka
    Kurasch, Simon
    Lehtinen, Ossi
    Kaiser, Ute
    Krasheninnikov, Arkady V.
    PHYSICAL REVIEW B, 2013, 88 (03)
  • [9] Effect of point defects on the optical and transport properties of MoS2 and WS2
    Yuan, Shengjun
    Roldan, Rafael
    Katsnelson, M. I.
    Guinea, Francisco
    PHYSICAL REVIEW B, 2014, 90 (04)
  • [10] Theoretical characterisation of point defects on a MoS2 monolayer by scanning tunnelling microscopy
    Gonzalez, C.
    Biel, B.
    Dappe, Y. J.
    NANOTECHNOLOGY, 2016, 27 (10)