Self-assembly of nanostructures on (631)-oriented GaAs substrates

被引：0

作者：

Lopez-Lopez, M. ^{[1
]}

Cruz-Hernandez, E. ^{[1
]}

Martinez-Velis, I. ^{[1
]}

Rojas-Ramirez, J. ^{[1
]}

Ramirez-Lopez, M. ^{[1
]}

Pulzara-Mora, A. ^{[2
]}

Hernandez-Rosas, J. ^{[1
]}

机构：

[1] Inst Politecn Nacl, Ctr Invest & Estudios Avanzados, Dept Phys, Apartado Postal 14-740, Mexico City 07000, DF, Mexico

[2] Univ Nacl Colombia, Bogota, Colombia

来源：

ADVANCED SUMMER SCHOOL IN PHYSICS 2007: FRONTIERS IN CONTEMPORARY PHYSICS | 2007年 / 960卷

关键词：

D O I：

暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work we present the growth and characterization of GaAs self-assembled quantum wires (SAQWRs), and InAs self-assembled quantum dots (SAQDs) by molecular beam epitaxy on (631)-oriented GaAs substrates. Adatoms on the (631) crystal plane present a strong surface diffusion anisotropy which we use to induce preferential growth along one direction to produce SAQWRs. On the other hand, InAs SAQDs were obtained on GaAs(631) substrates by the Stransky-Krastanov (S-K) growth method. SAQDs grown directly on (631) substrates presented considerable fluctuations in size. We study the effects of growing a stressor layer before the SAQDs formation to reduce these fluctuations.

引用

页码：210 / +

页数：2

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