Adsorption and decomposition of SiH4 and surface silicide formation on Cu(111) studied by X-ray absorption fine structure spectroscopy

被引：15
|
作者：
Kanazawa, T
Kitajima, Y
Yokoyama, T
Yagi, S
Imanishi, A
Ohta, T
机构：
[1] UNIV TOKYO, DEPT CHEM, GRAD SCH SCI, BUNKYO KU, TOKYO 113, JAPAN
[2] NATL LAB HIGH ENERGY PHYS, PHOTON FACTORY, TSUKUBA, IBARAKI 305, JAPAN
来源：
SURFACE SCIENCE | 1996年 / 357卷 / 1-3期
关键词：
chemisorption; copper; near edge extended X-ray absorption fine structure (NEXAFS); silane; silicides; silicon; surface extended X-ray absorption line structure (SEXAFS); surface structure; morphology; roughness; and topography;
D O I：
10.1016/0039-6028(96)00080-5
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Adsorption and thermal decomposition of silane (SiH4) on Cu(111) were investigated by Si K-edge X-ray absorption fine structure spectroscopy. It is found that the molecule is adsorbed on the hcp site retaining some of the Si-H bonds at 110 K. After heating the sample to 230 K, Si-Si bonds were recognized in the EXAFS spectra which indicates cluster formation on the surface. Further annealing at 600 K forms a silicide-like structure by substituting some surface Cu atoms by Si ones.
引用
收藏
页码：160 / 164
页数：5
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