A 42.15-68.35 dBΩ TUNABLE GAIN TRANSIMPEDANCE AMPLIFIER USING 0.18-μm CMOS PROCESS

被引：1

作者：

Chang, Yu-Hsin ^{[1
]}

Chiang, Yen-Chung ^{[1
]}

Yang, Ching-Yuan ^{[1
]}

机构：

[1] Natl Chung Hsing Univ, Dept Elect Engn, Taichung 40227, Taiwan

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2015年 / 57卷 / 04期

关键词：

CMOS process; optical communication; regulated cascode; transimpedance amplifier; variable gain amplifier; MU-M CMOS;

D O I：

10.1002/mop.28969

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter proposes a transimpedance amplifier with a tunable gain fabricated in the 0.18-m CMOS process. The tunable gain range is from 42.15 to 68.35 dB with a 2.88-3.52 GHz bandwidth, and its group delay is around 200 ps. With 2.5 Gb/s, 2(15)-1, 2(23)-1, and 2(31)-1 pseudorandom bit sequence inputs, the corresponding recovered clock jitters are 7.72, 7.83, and 8.3 ps, respectively. (c) 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:830-832, 2015

引用

页码：830 / 832

页数：3

共 50 条

[1] A Transimpedance Amplifier With a Tunable Bandwidth in 0.18-μm CMOS
Chien, Chih-Kang
Hsieh, Hsieh-Hung
Chen, Huan-Sheng
Lu, Liang-Hung
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2010, 58 (03) : 498 - 505
[2] A 75-dB . Ω 10-Gb/s Transimpedance Amplifier in 0.18-μm CMOS Technology
Jin, Jun-De
Hsu, Shawn S. H.
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2008, 20 (21-24) : 2177 - 2179
[3] A 1.5 GHz Linear-in-dB Variable Gain Amplifier with Process and Temperature Tracking in 0.18-μm CMOS
Liu, Xiong
Willson, Alan N., Jr.
[J]. 2009 IEEE 8TH INTERNATIONAL CONFERENCE ON ASIC, VOLS 1 AND 2, PROCEEDINGS, 2009, : 266 - 269
[4] Implementation of Sense Amplifier in 0.18-μm CMOS Process
Rahman, L. F.
Reaz, M. B. I.
Ali, M. A. M.
Marufuzzaman, M.
[J]. ELEKTRONIKA IR ELEKTROTECHNIKA, 2012, 120 (04) : 113 - 116
[5] 40-Gb/s transimpedance amplifier in 0.18-μm CMOS technology
Jin, Jun-De
Hsu, Shawn S. H.
[J]. ESSCIRC 2006: PROCEEDINGS OF THE 32ND EUROPEAN SOLID-STATE CIRCUITS CONFERENCE, 2006, : 520 - +
[6] A 40-Gb/s transimpedance amplifier in 0.18-μm CMOS technology
Jin, Jun-De
Hsu, Shawn S. H.
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2008, 43 (06) : 1449 - 1457
[7] An Inductorless Variable-Gain Transimpedance Amplifier Design for 4GHz Optical Communication using 0.18-μm CMOS
Samuel, Lee Bai Song
Sern, Tan Yung
Kumar, Thangarasu Bharatha
Seng, Yeo Kiat
[J]. PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON COMPUTER NETWORKS AND COMMUNICATION TECHNOLOGY (CNCT 2016), 2016, 54 : 221 - 230
[8] An Inductorless Differential Transimpedance Amplifier Design for 5 GHz Optical Communication using 0.18-μm CMOS
Samuel, Lee Bai Song
Kumar, Thangarasu Bharatha
Qiong, Zou
Seng, Yeo Kiat
[J]. 2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2018, : 1432 - 1435
[9] A Low Power Wideband Differential Transimpedance Amplifier for Optical Receivers in 0.18-μm CMOS
Seng, Chong Whye
Sern, Tan Yung
Seng, Yeo Kiat
[J]. 2013 IEEE 11TH INTERNATIONAL NEW CIRCUITS AND SYSTEMS CONFERENCE (NEWCAS), 2013,
[10] An Inductorless Transimpedance Amplifier Design for 10 Gb/s Optical Communication using 0.18-μm CMOS
Samuel, Lee Bai Song
Sern, Tan Yung
Kumar, Thangarasu Bharatha
Seng, Yeo Kiat
Li Zhichao
Yu Xiaopeng
[J]. 2016 INTERNATIONAL SYMPOSIUM ON INTEGRATED CIRCUITS (ISIC), 2016,

← 1 2 3 4 5 →