A 75-dB . Ω 10-Gb/s Transimpedance Amplifier in 0.18-μm CMOS Technology

被引：16
|
作者：
Jin, Jun-De [1 ,2 ]
Hsu, Shawn S. H. [1 ,2 ]
机构：
[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[2] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2008年 / 20卷 / 21-24期
关键词：
Complementary metal-oxide-semiconductor (CMOS); gain-bandwidth product (GBW); inductor peaking; photodiode; transimpedance amplifier (TIA);
D O I：
10.1109/LPT.2008.2007812
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A six-stage transimpedance amplifier (TIA) was realized in a 0.18-mu m complementary metal-oxide-semiconductor process. By adopting all effective gain-bandwidth product (GBW) enhancement technique, pi-type inductor peaking, the measured S-21, transimpedance gain, and bandwidth are 41 dB, 75 dB . Q, and 7.2 GHz, respectively, in the presence of an on-chip photodiode capacitance of 450 fF at the input. The 10-Gb/s TIA can operate tinder a maximum output swing of 800 mV(pp) and achieve a recorded GBW per DC power of 441.1 GHz . Omega/mW.
引用
收藏
页码：2177 / 2179
页数：3
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