Numerical simulation of HgCdTe nBn long-wavelength infrared detector

被引：0
|
作者：
He, Jiale [1 ]
Hu, Weida [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China
来源：
2018 18TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD 2018) | 2018年
关键词：
HgCdTe; dark current; nBn structure; numerical simulation; DESIGN;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
HgCdTe nBn device is a kind of unipolar barrier layer in which the B layer is a wide band gap barrier layer with a thickness of several tens of nanometers, and could effectively reduce the dark current and the process difficulty of HgCdTe device. The photoelectric properties of HgCdTe nBn infrared detectors are studied by two-dimensional numerical simulation. The energy band structure of the nBn structure and the influence of the structural parameters on the performance of the device are theoretically calculated, which provides guidance for designing or optimizing the structure of HgCdTe nBn infrared detector.
引用
收藏
页码：17 / 18
页数：2
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