Quantum Dot Charging By Means Of Temperature And Magnetic Field

被引：1

作者：

Larsson, L. A. ^{[1
]}

Moskalenko, E. S. ^{[2
]}

Holtz, P. O. ^{[1
]}

机构：

[1] Linkoping Univ, IFM, Semicond Mat, SE-58183 Linkoping, Sweden

[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷

关键词：

charge state; quantum dot; wetting layer; magnetic field; temperature dependence;

D O I：

10.1063/1.3666439

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A micro-photoluminescence study of individual InAs/GaAs quantum dots is presented. It is demonstrated that by varying the strength of an applied magnetic field and/or the temperature, the charge state of a quantum dot can be tuned. The charge tuning mechanism is shown to be due to the modification of the electron and hole transport in the wetting layer plane prior to their capture into the quantum dot.

引用

页数：2

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