Interfacial reaction between SnAgCu solder and Cu substrate and reliability evaluation

被引：0
|
作者：
Xia, YH [1 ]
Xie, XM
Chang, JL
Lu, CY
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
[2] DCSIM Tech Co Ltd, Shanghai 200050, Peoples R China
来源：
RARE METAL MATERIALS AND ENGINEERING | 2005年 / 34卷
关键词：
SnAgCu solder; NiP; interfacial reaction; reliability;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Liquid and solid state reaction between SnAgCu solder and Cu substrate with NiP finish was investigated. For NiP/SnAgCu/NiP sample, NiP layer exhausted and Ni3P phase formed after 500 h aging. Some intermetallic compound spalled into solder, which are detrimental to interconnection reliability. One side Cu/NiP substrate was replaced by bare Cu to prepare Cu/SnAgCu/NiP sample. It was observed that consumption of Ni reduced and NiP layer had not exhausted under the same experimental condition. Cu atomes from bare Cu substrate participated in reatction at NiP-solder interface and inhibited Ni consumption so as to improve reliability of solder joint. During solid state reaction IMC growth follow Fick's Law: w=(Dt)(1/2).
引用
收藏
页码：388 / 391
页数：4
相关论文
共 15 条
  • [1] Lead-free solders in microelectronics
    Abtew, M
    Selvaduray, G
    [J]. MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2000, 27 (5-6): : 95 - 141
  • [2] Effect of reaction time and P content on mechanical strength of the interface formed between eutectic Sn-Ag solder and Au/electroless Ni(P)/Cu bond pad
    Alam, MO
    Chan, YC
    Tu, KN
    [J]. JOURNAL OF APPLIED PHYSICS, 2003, 94 (06) : 4108 - 4115
  • [3] Interfacial reaction of Pb-Sn solder and Sn-Ag solder with electroless Ni deposit during reflow
    Alam, MO
    Chan, YC
    Hung, KC
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2002, 31 (10) : 1117 - 1121
  • [4] Reliability study of the electroless Ni-P layer against solder alloy
    Alam, MO
    Chan, YC
    Hung, KC
    [J]. MICROELECTRONICS RELIABILITY, 2002, 42 (07) : 1065 - 1073
  • [5] Degradation of electroless Ni(P) under-bump metallization in Sn3.5Ag and Sn37Pb solders during high-temperature storage
    Chen, WM
    McCloskey, P
    Byrne, P
    Cheasty, P
    Duffy, G
    Rohan, JF
    Boardman, J
    Mulcahy, A
    O'Mathuna, SC
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2004, 33 (08) : 900 - 907
  • [6] Effect of Ni layer thickness and soldering time on intermetallic compound formation at the interface between molten Sn-3.5Ag and Ni/Cu substrate
    Choi, WK
    Lee, HM
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (11) : 1251 - 1255
  • [7] Formation and growth kinetics of interfacial intermetallics in Pb-free solder joint
    Li, GY
    Chen, BL
    [J]. IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES, 2003, 26 (03): : 651 - 658
  • [8] Interfacial microstructure evolution between eutectic SnAgCu solder and Al/Ni(V)/Cu thin films
    Li, M
    Zhang, F
    Chen, WT
    Zeng, K
    Tu, KN
    Balkan, H
    Elenius, P
    [J]. JOURNAL OF MATERIALS RESEARCH, 2002, 17 (07) : 1612 - 1621
  • [9] MIN H, 2004, THIN SOLID FILMS, V462, P76
  • [10] Effects of phosphorus content on the reaction of electroless Ni-P with Sn and crystallization of Ni-P
    Sohn, YC
    Yu, J
    Kang, SK
    Shih, DY
    Choi, WK
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2004, 33 (07) : 790 - 795
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