Novel Polarization Beam Splitter Based on p-i-n Structure for an Indium Phosphide Platform

被引：0
|
作者：
Abadia, Nicolas [1 ,2 ,4 ]
Dai, Xiangyang [3 ]
Lu, Qiaoyin [3 ]
Guo, Wei-Hua [3 ]
El-Fiky, Eslam [4 ]
Plant, David V. [4 ]
Donegan, John F. [1 ,2 ]
机构：
[1] Trinity Coll Dublin, Sch Phys, Semicond Photon Grp, Dublin 2, Ireland
[2] Trinity Coll Dublin, CRANN, Dublin 2, Ireland
[3] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Hubei, Peoples R China
[4] McGill Univ, Dept Elect & Comp Engn, Montreal, PQ H3A 2A7, Canada
来源：
2017 19TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON) | 2017年
基金：
爱尔兰科学基金会;
关键词：
optoelectronics; photonic integrated circuits; integrated optical devices; polarization-selective devices; polarization beam splitters; indium phosphide; INDEX; INP;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a polarization beam splitter (PBS) based on the indium phosphide (InP) platform is presented. The main advantage of the device is that the tight fabrication tolerances of fully passive devices can be overcome by adjusting two voltages in an easy calibration. To produce the splitting function, the Pockels effect and the plasma dispersion effect are exploited in the phase shifters of a symmetric 1x2 Mach-Zehnder interferometer (MZI). The experimental results show that such a device operating at 1550 nm has an on-chip loss of 3.5 dB and a polarization extinction ratio better than 15 dB.
引用
收藏
页数：4
相关论文
共 50 条
  • [41] ELECTRICAL-PROPERTIES OF LIGHT-EMITTING P-I-N GALLIUM-PHOSPHIDE DIODES
    DEMCHENKO, AM
    LEBEDEV, AA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (10): : 1090 - 1092
  • [42] Polarization beam splitter based on dielectric periodic structure with different EFCs for two polarizations
    张渊
    蒋玉蓉
    李夏
    薛唯
    ChineseOpticsLetters, 2008, (10) : 794 - 796
  • [43] A versatile spectrometer based on a large-volume Si(Li) p-i-n structure
    Radzhapov, A. S.
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 2007, 50 (04) : 452 - 454
  • [44] Enhanced absorption process in the thin active region of GaAs based p-i-n structure*
    Yue, Chen
    Tang, Xian-Sheng
    Li, Yang-Feng
    Wang, Wen-Qi
    Li, Xin-Xin
    Zhang, Jun-Yang
    Deng, Zhen
    Du, Chun-Hua
    Jia, Hai-Qiang
    Wang, Wen-Xin
    Lu, Wei
    Jiang, Yang
    Chen, Hong
    CHINESE PHYSICS B, 2021, 30 (09)
  • [45] A broad-angle polarization beam splitter based on a simple dielectric periodic structure
    Zhang, Yuan
    Jiang, Yurong
    Xue, Wei
    He, Sailing
    OPTICS EXPRESS, 2007, 15 (22): : 14363 - 14368
  • [46] Electrical and photoelectrical properties of a GaAs-based p-i-n structure grown by MOVPE
    Begotti, M
    Longo, M
    Magnanini, R
    Tarricone, L
    Gombia, E
    Mosca, R
    Lynch, M
    Barnham, K
    Mazzer, M
    Hill, G
    CRYSTAL RESEARCH AND TECHNOLOGY, 2005, 40 (10-11) : 1033 - 1038
  • [47] Experimental Demonstration of a Polarization Beam Splitter Based on Augmented Low Index Guiding Structure
    Sun, X.
    Aitchison, J. S.
    Mojahedi, M.
    2016 IEEE PHOTONICS CONFERENCE (IPC), 2016, : 416 - 417
  • [48] A versatile spectrometer based on a large-volume Si(Li) p-i-n structure
    A. S. Radzhapov
    Instruments and Experimental Techniques, 2007, 50 : 452 - 454
  • [49] Polarization beam splitter based on dielectric periodic structure with different EFCs for two polarizations
    Zhang, Yuan
    Jiang, Yurong
    Li, Xia
    Xue, Wei
    CHINESE OPTICS LETTERS, 2008, 6 (10) : 794 - 796
  • [50] Dependence of dark current and photoresponse on polarization charges for AlGaN-based heterojunction p-i-n photodetectors
    Chen, Hai-feng
    Chen, Yi-Ren
    Song, Hang
    Li, Zhi-Ming
    Jiang, Hong
    Li, Da-Bing
    Miao, Guo-Qing
    Sun, Xiao-Juan
    Zhang, Zhi-Wei
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2017, 214 (06):
12345