Novel Polarization Beam Splitter Based on p-i-n Structure for an Indium Phosphide Platform

被引：0
|
作者：
Abadia, Nicolas [1 ,2 ,4 ]
Dai, Xiangyang [3 ]
Lu, Qiaoyin [3 ]
Guo, Wei-Hua [3 ]
El-Fiky, Eslam [4 ]
Plant, David V. [4 ]
Donegan, John F. [1 ,2 ]
机构：
[1] Trinity Coll Dublin, Sch Phys, Semicond Photon Grp, Dublin 2, Ireland
[2] Trinity Coll Dublin, CRANN, Dublin 2, Ireland
[3] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Hubei, Peoples R China
[4] McGill Univ, Dept Elect & Comp Engn, Montreal, PQ H3A 2A7, Canada
来源：
2017 19TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON) | 2017年
基金：
爱尔兰科学基金会;
关键词：
optoelectronics; photonic integrated circuits; integrated optical devices; polarization-selective devices; polarization beam splitters; indium phosphide; INDEX; INP;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a polarization beam splitter (PBS) based on the indium phosphide (InP) platform is presented. The main advantage of the device is that the tight fabrication tolerances of fully passive devices can be overcome by adjusting two voltages in an easy calibration. To produce the splitting function, the Pockels effect and the plasma dispersion effect are exploited in the phase shifters of a symmetric 1x2 Mach-Zehnder interferometer (MZI). The experimental results show that such a device operating at 1550 nm has an on-chip loss of 3.5 dB and a polarization extinction ratio better than 15 dB.
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页数：4
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