Selective Adsorption of Organosilane Molecules Along Step Edges of Atomically Flattened Si(111) Surfaces

被引:0
|
作者
Sakane, Hiroki [1 ]
Yoshimatsu, Akina [1 ]
Shigetoshi, Takushi [1 ]
Uchikoshi, Junichi [1 ]
Morita, Mizuho [1 ]
Arima, Kenta [1 ]
机构
[1] Osaka Univ, Dept Precis Sci & Technol, Grad Sch Engn, Suita, Osaka 5650871, Japan
关键词
Wet Chemical Treatment; Atomic Step; Modification; Local Oxidation; Atomic Force Microscopy; SCANNING-TUNNELING-MICROSCOPY; CU NANOWIRES; ELECTROLESS DEPOSITION; NANOSTRUCTURES; SILANIZATION; FABRICATION; GROWTH; COPPER; LINES;
D O I
10.1166/jnn.2011.3894
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We investigate the selective adsorption of organosilane molecules (3-aminopropyltriethoxysilane (APTES) and octadecyltrichlorosilane (OTS)) at the step edges of a flattened Si(111) surface by atomic force microscopy. The flattened Si(111) surface is formed by dipping a vicinal Si(111) wafer into ultralow-dissolved-oxygen water after treatment with HE The selective adsorption of these organosilanes is achieved only when the Si(111) sample is pretreated with a Cu-containing solution to form Cu wires along the step edges of the Si(111) surface. This is probably due to the simultaneous formation of one-dimensional Si oxide covered with hydroxyl (OH) groups underneath Cu wires during the electroless reduction of Cu ions in water. At the step edges, APTES and OTS molecules are adsorbed as disperse clusters and as rows of bumps, respectively. The reason for this difference is still unclear, but a key factor is probably the control of the moisture content in the environment. The step edges, which are functionalized by organosilane molecules with various terminations such as -NH2 and -CH3, are expected to be utilized in novel nanoscale devices and processes.
引用
收藏
页码:2962 / 2967
页数:6
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