Ultra-Low-Power Current Sensor Utilizing Magnetoelectric Nanowires

被引：9

作者：

Bauer, Matthew J. ^{[1
]}

Thomas, Andrew ^{[1
]}

Isenberg, Bridget ^{[1
]}

Varela, John ^{[2
]}

Faria, Andrea ^{[2
]}

Arnold, David P. ^{[2
]}

Andrew, Jennifer S. ^{[1
]}

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

来源：

IEEE SENSORS JOURNAL | 2020年 / 20卷 / 10期

关键词：

Nanowires; Magnetic sensors; Magnetoelectric effects; Magnetostriction; Magnetic fields; Lead; Current sensor; magnetoelectric; nanowires; bottom-up fabrication; dielectrophoresis;

D O I：

10.1109/JSEN.2020.2968224

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication and characterization of an ultra-low power current sensor utilizing magnetoelectric lead zirconate titanate/nickel zinc ferrite (PZT-NZF) nanowires is presented. Low-cost, low-temperature, and post-CMOS-compatible fabrication methods were utilized in the fabrication of a nanowire array. This array was electrically and mechanically flip-chip bonded onto a printed circuit board (PCB) with a current trace. The PCB also contained a low-power amplification circuit to provide buffering and a gain of 10. Characterization of the sensor up to 70 mA showed a sensitivity of 3.24 mV/mA, sensitivity error of 1.16%, nonlinearity of 4%, noise floor of < 2 mA, and noise density of 8.4 nA Hz(-1/2) at 1kHz. Lastly the only power consumption necessary for device operation was the power required for a low power op amp, 0.225 mW.

引用

页码：5139 / 5145

页数：7

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