Photonic CMOS and quantum-dot lasers for ultra-low voltage and high-power applications: a novel approach for improved stability and quantum efficiency

A quantum dots photonic CMOS device includes a quantum dot laser in the MOSFET drain region, and a photon sensor in the MOSFET drain / well regions. The MOSFET, quantum dot laser, and photon sensor are fabricated as one integral device. When a voltage is applied to the MOSFET gate, and a voltage is applied to the drain, both MOSFET and quantum dot laser are on. Light from the quantum dot laser is absorbed by the embedded photon sensors (which can be avalanche photo diodes (APD)), which produce a large light current flowing back to the drain and laser as part of total output current. When the MOSFET is off, both quantum dot laser and photon sensor are off. Quantum dot laser is well known for its near OV laser diode forward voltage. As a field effective transistor, photonic CMOS is dominated by electric fiends and less dependent on temperatures. The embedded MOSFET, laser and APD form an amplifier that can substantially improve the external quantum efficiency of quantum dot lasers.