Heterogeneous Integration at Fine Pitch (≤ 10 μm) using Thermal Compression Bonding

被引:60
|
作者
Bajwa, Adeel A. [1 ]
Jangam, SivaChandra [1 ]
Pal, Saptadeep [1 ]
Marathe, Niteesh [1 ]
Bai, Tingyu [1 ]
Fukushima, Takafumi [1 ]
Goorsky, Mark [1 ]
Iyer, Subramanian S. [1 ]
机构
[1] UCLA, CHIPS, 420 Westwood Plaza,Engn 4,66-127B, Los Angeles, CA 90024 USA
关键词
Siclicon Interconnect Fabric (Si-IF); interconnect pitch; dielet-to-dielet spacing; thermal compression bonding (TCB); heterogeneous integrations; INTERCONNECTS; OXIDATION; STRENGTH;
D O I
10.1109/ECTC.2017.240
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The scaling of package and circuit board dimensions is central to heterogeneous system integration. We describe our solderless direct metal-to-metal low pressure (< 70 MPa) and low temperature (< 250 degrees C) thermal compression bonding (TCB) technique and present preliminary results of dielet (4 - 25 mm(2) area) attach to a rigid Silicon Interconnect Fabric (Si-IF) with up to two levels of wiring (2 - 10 mu m pitch). Dielets were attached at a pitch <= 10 mu m with an inter-dielet spacing of <= 100 mu m. We show an effective specific contact resistance of < 1 Omega-mu m(2) and shear strength of > 20 MPa. The combined reduction of dielet interconnect pitch, dielet-to-dielet spacing and trace pitch will enable a Moore's law for packaging.
引用
收藏
页码:1276 / 1284
页数:9
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