Characteristics of charging effect in one-dimensional array of Bi2Sr2CaCu2O8+δ intrinsic Josephson junctions

被引：1

作者：

Kawae, T

Yasuda, T

Awaji, S

Nakajima, K

Hatano, T

Yamashita, T

机构：

[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

[2] Kyushu Inst Technol, Dept Comp Sci & Elect, Fukuoka 8208502, Japan

[3] Tohoku Univ, Mat Res Inst, High Field Lab Supercond Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan

[4] Hirosaki Univ, Fac Sci & Technol, Hirosaki, Aomori 0368561, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 24-27期

关键词：

intrinsic Josephson junctions; one-dimensional junction array; charging effect; charge soliton; Bi2Sr2CaCu2O8+delta; LPE film;

D O I：

10.1143/JJAP.44.L766

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

For the observation of the charging effect on a Josephson junction, the charging energy (E-c) must be much larger than the Josephson coupling energy (E-J) and thermal energy (k(B)T). We investigated the properties of submicron-sized Bi2Sr2CaCu2O8+delta intrinsic Josephson junctions (IJJs) at low temperature. The current-voltage curve of IJJs with a junction area of 0.06 ltm2 showed a much higher resistance state near the zero bias voltage regions when the measurement temperature decreased to 72.6mK. The ratios of E-c/E-J and E-c/k(B)T were 7.04 and 5.78, respectively, which indicates that the charging effect is dominant. In addition, a characteristic voltage structure due to the charging effect in one-dimensional junction array, which is composed of the offset voltage and the threshold voltage of the junction, was observed.

引用

页码：L766 / L769

页数：4

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