Mobility and bulk electron-phonon interaction in two-dimensional materials

被引：0

作者：

Gunst, Tue ^{[1
,2
]}

Brandbyge, Mads ^{[1
,2
]}

Markussen, Troels ^{[3
]}

Stokbro, Kurt ^{[3
]}

机构：

[1] DTU Nanotech, Lyngby, Denmark

[2] Tech Univ Denmark, CNG, Lyngby, Denmark

[3] QuantumWise AS, Copenhagen, Denmark

来源：

2015 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD) | 2015年

关键词：

GRAPHENE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present calculations of the phonon-limited mobility in intrinsic n-type monolayer graphene, silicene and MoS2. The material properties, including the electron-phonon interaction, are calculated from first principles. Unlike graphene, the carriers in silicene show strong interaction with the out-of-plane modes. However, we find that graphene only has a slightly higher mobility compared to silicene. For MoS2 we obtain several orders of magnitude lower mobilities and in agreement with other recent theoretical results. The simulations illustrate the predictive capabilities of the newly implemented Boltzmann Transport Equation (BTE) solver in the Atomistix ToolKit (ATK) simulation tool.

引用

页码：32 / 35

页数：4

共 50 条

[41] Spectroscopy of the electron-phonon interaction in the layered two-dimensional dichalcogenide 1T-VSe2
Kamarchuk, GV
Khotkevich, AV
Bagatskii, VM
Molinie, P
Leblanc, A
Faulques, E
LOW TEMPERATURE PHYSICS, 2001, 27 (01) : 56 - 60
[42] Electron-phonon interaction of one-dimensional and two-dimensional surface states in indium adlayers on the Si(111) surface
Uhm, Sang Hoon
Yeom, Han Woong
PHYSICAL REVIEW B, 2012, 86 (24):
[43] Strong electron-electron and electron-phonon interactions in one- and two-dimensional solids
Grioni, M
Perfetti, L
Berger, H
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 2004, 137 : 417 - 423
[44] Atomistic modeling of electron-phonon interaction and electron mobility in Si nanowires
Yamada, Y.
Tsuchiya, H.
Ogawa, M.
JOURNAL OF APPLIED PHYSICS, 2012, 111 (06)
[45] Optical transition for a quasi-two-dimensional system with an electron-phonon interaction
Kim, J
Kim, B
Sug, JY
Lee, YJ
Jo, SG
Choi, SD
PHYSICAL REVIEW B, 2002, 66 (07) : 731071 - 731074
[46] THE ELECTRON-PHONON INTERACTION
SHAM, LJ
ZIMAN, JM
SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1963, 15 : 221 - 298
[47] Electron-phonon coupling in n-type Ge two-dimensional systems
Ciano, C.
Persichetti, L.
Montanari, M.
Di Gaspare, L.
Capellini, G.
Baldassarre, L.
Ortolani, M.
Pashkin, A.
Helm, M.
Winnerl, S.
Virgilio, M.
De Seta, M.
PHYSICAL REVIEW B, 2020, 102 (20)
[48] Electron-phonon vertex in the two-dimensional one-band Hubbard model
Huang, ZB
Hanke, W
Arrigoni, E
Scalapino, DJ
PHYSICAL REVIEW B, 2003, 68 (22):
[49] Soliton-like bipolaron in two-dimensional deformable electron-phonon system
Wang, Y
Wang, KL
Wan, SL
COMMUNICATIONS IN THEORETICAL PHYSICS, 1998, 29 (02) : 309 - 312
[50] Electron-phonon interaction in bulk Pb: Beyond the Fermi surface
Sklyadneva, I. Yu
Heid, R.
Echenique, P. M.
Bohnen, K-B
Chulkov, E. V.
PHYSICAL REVIEW B, 2012, 85 (15):

← 1 2 3 4 5 →