Characterization and Absolute QE Measurements of Delta-Doped N-Channel and P-Channel CCDs

被引：3
|
作者：
Jacquot, Blake C. [1 ]
Monacos, Steve P. [1 ]
Jones, Todd J. [1 ]
Blacksberg, Jordana [1 ]
Hoenk, Michael E. [1 ]
Nikzad, Shouleh [1 ]
机构：
[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
来源：
HIGH ENERGY, OPTICAL, AND INFRARED DETECTORS FOR ASTRONOMY IV | 2010年 / 7742卷
关键词：
Delta doping; CCD; QE; PRESSURE; UV;
D O I：
10.1117/12.857694
中图分类号：
P1 [天文学];
学科分类号：
0704 ;
摘要：
In this paper we present the methodology for making absolute quantum efficiency (QE) measurements from the vacuum ultraviolet (VUV) through the near infrared (NIR) on delta-doped silicon CCDs. Delta-doped detectors provide an excellent platform to validate measurements through the VUV due to their enhanced UV response. The requirements for measuring QE through the VUV are more strenuous than measurements in the near UV and necessitate, among other things, the use of a vacuum monochromator, and good camera vacuum to prevent chip condensation, and more stringent handling requirements. The system used for these measurements was originally designed for deep UV characterization of CCDs for the WF/PC instrument on Hubble and later for Cassini CCDs.
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页数：12
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