A 63-μW 92.68-dB SNDR Sigma-Delta Modulator using Self-biased Inverter-based Amplifiers

被引:1
|
作者
Dela Cruz, Vania Maria [1 ]
Silverio, Angelito [1 ]
机构
[1] Univ Santo Tomas, Fac Engn, Manila, Philippines
关键词
sigma-delta modulator; inverter-based amplifier;
D O I
10.1109/ISEE51682.2021.9418716
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents an inverter-based sigma-delta modulator for use in wearable devices. This work employs the use of power-efficient integrators using self-biased, fully differential inverters, allowing for the amplifier to compensate any fluctuation due to process, voltage, and temperature (PVT) variations. To verify the effectiveness of the amplifier, a second-order discrete-time sigma-delta modulator is implemented in 0.18 mu m CMOS technology. The modulator achieves a 92.68 dB SNDR and 93.47 dB SNR while consuming 63-mu W from a 1.8V supply, corresponding to a Walden's FOM of 89.96 fJ/step for a signal bandwidth of 10 kHz.
引用
收藏
页码:5 / 8
页数:4
相关论文
共 34 条
  • [31] A 7.2 mW 75.3 dB SNDR 10 MHz BW CT Delta-Sigma Modulator Using Gm-C-Based Noise-Shaped Quantizer and Digital Integrator
    Kim, Taewook
    Han, Changsok
    Maghari, Nima
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2016, 51 (08) : 1840 - 1850
  • [32] A 0.6-V 86.5-dB DR 40-kHz BW Inverter-Based Continuous-Time Delta-Sigma Modulator With PVT-Robust Body-Biasing
    Lee, Sangwoo
    Park, Sungsik
    Kim, Yunhong
    Chae, Youngcheol
    Kim, Yitae
    Lee, Jesuk
    Lee, Jongwoo
    IEEE SOLID-STATE CIRCUITS LETTERS, 2021, 4 : 178 - 181
  • [33] A 72.9-dB SNDR 20-MHz BW 2-2 Discrete-Time Sturdy MASH Delta-Sigma Modulator Using Source-Follower-Based Integrators
    Kwak, Yong-Sik
    Cho, Kang-Il
    Kim, Ho-Jin
    Lee, Seung-Hoon
    Ahn, Gil-Cho
    2017 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC), 2017, : 289 - 292
  • [34] A 72.9-dB SNDR 20-MHz BW 2-2 Discrete-Time Resolution-Enhanced Sturdy MASH Delta-Sigma Modulator Using Source-Follower-Based Integrators
    Kwak, Yong-Sik
    Cho, Kang-Il
    Kim, Ho-Jin
    Lee, Seung-Hoon
    Ahn, Gil-Cho
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2018, 53 (10) : 2772 - 2782