Porous silicon upon multicrystalline silicon: Structure and photoluminiscence

被引：3
|
作者：
Melnichenko, MM
Svezhentsova, KV
Shmyryeva, AN
机构：
[1] Taras Shevchenko Univ, Dept Phys, UA-03033 Kiev, Ukraine
[2] Natl Tech Univ Ukraine, KPI, Appl Elect Res Inst, UA-03056 Kiev, Ukraine
来源：
JOURNAL OF MATERIALS SCIENCE | 2005年 / 40卷 / 06期
关键词：
D O I：
10.1007/s10853-005-0575-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ultrathin porous silicon layers have been stain-etched upon multicrystalline silicon (multi-Si) substrates. We studied optical and structural properties of porous silicon by photoluminescence, photo-luminescence excitation, reflection, atomic force microscopy and scanning tunnel microscopy methods. It was observed that the thickness of porous silicon did not exceed 20 nm. The photoluminescence method has shown that photoluminescence spectra of porous silicon of different grains have shown that they differ insignificantly (similar to 10%) in intensity. It was found that por-Si layers with optimal antireflection characteristics was obtained during etching time 7 min. In the paper the comparison of the reflection characteristics of investigated samples por-Si with industrial antireflection coating is presented. (C) 2005 Springer Science + Business Media, Inc.
引用
收藏
页码：1409 / 1412
页数：4
相关论文
共 50 条
  • [31] Identification of microdefects in multicrystalline silicon
    Werner, M
    Moller, HJ
    Wolf, E
    DEFECTS AND DIFFUSION IN SILICON PROCESSING, 1997, 469 : 89 - 94
  • [32] PHOTOVOLTAIC EFFECT OF A METAL POROUS SILICON SILICON STRUCTURE
    HAN, ZF
    SHI, JY
    TAO, H
    GONG, L
    FU, SJ
    SHI, CS
    ZHANG, XY
    PHYSICS LETTERS A, 1994, 186 (03) : 265 - 268
  • [33] Multicrystalline silicon crystal assisted by silicon flakes as seeds
    Yuan, Shuai
    Hu, Dongli
    Yu, Xuegong
    He, Liang
    Lei, Qi
    Chen, Hongrong
    Zhang, Xueri
    Xu, Yunfei
    Yang, Deren
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2018, 174 : 202 - 205
  • [34] Hydrogen passivation of multicrystalline silicon
    Dubé, CE
    Hanoka, JI
    CONFERENCE RECORD OF THE THIRTY-FIRST IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2005, 2005, : 883 - 888
  • [35] Origin of trapping in multicrystalline silicon
    Gundel, Paul
    Schubert, Martin C.
    Warta, Wilhelm
    Journal of Applied Physics, 2008, 104 (07):
  • [36] Electrical properties improvement of multicrystalline silicon solar cells using a combination of porous silicon and vanadium oxide treatment
    Derbali, L.
    Ezzaouia, H.
    APPLIED SURFACE SCIENCE, 2013, 271 : 234 - 239
  • [37] Multilayered structure of porous silicon
    N.I. Lobachevskii Nizhnii Novgorod, State Univ, Nizhnii Novgorod, Russia
    Surf Invest X Ray Synchrotron Neutron Techniq, 4 (477-480):
  • [38] Multicrystalline silicon for solar cells
    Möller, HJ
    Funke, C
    Rinio, M
    Scholz, S
    THIN SOLID FILMS, 2005, 487 (1-2) : 179 - 187
  • [39] Growth optimization of multicrystalline silicon
    Moeller, H. J.
    Funke, C.
    Kressner-Kiel, D.
    Wuerzner, S.
    EMRS-C: MATERIALS DEVICES AND ECONOMICS ISSUES FOR TOMORROW'S PHOTOVOLTAICS, 2011, 3
  • [40] Hall mobility in multicrystalline silicon
    Schindler, F.
    Geilker, J.
    Kwapil, W.
    Warta, W.
    Schubert, M. C.
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (04)
12345