Scintillation properties of Ce doped Gd2Lu1(Ga,Al)5O12 single crystal grown by the micro-pulling-down method

被引：16
|
作者：
Kamada, Kei [1 ,4 ]
Yanagida, Takayuki [2 ]
Pejchal, Jan [3 ]
Nikl, Martin [3 ]
Endo, Takanori [1 ]
Tsutsumi, Kousuke [1 ]
Usuki, Yoshiyuki [1 ]
Fujimoto, Yutaka [2 ]
Fukabori, Akihiro [2 ]
Yoshikawa, Akira [2 ,4 ]
机构：
[1] Furukawa Co Ltd, Mat Res Lab, Tsukuba, Ibaraki 3050856, Japan
[2] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
[3] AS CR, Inst Phys, Prague 16253, Czech Republic
[4] Tohoku Univ, New Ind Creat Hatchery Ctr NICHe, Aoba Ku, Sendai, Miyagi 9808579, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2012年 / 352卷 / 01期
关键词：
Single crystal growth; Oxides; Scintillator materials; Scintillators; PHASE;
D O I：
10.1016/j.jcrysgro.2011.11.057
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Ce:Gd2Lu1(Ga,Al)(5)O-12 single crystals were grown by the micro-pulling down (mu-PD) method. All grown crystals were yellow and transparent with 3.0 mm in diameter, 15-30 mm in length. Neither visible inclusions nor cracks were observed. Luminescence and scintillation properties were measured. The substitution at the Al3+ sites by Ga3+ and at the Lu3+ sites by Gd3+ in garnet structure has been studied. In these crystals, Ce3+ 4f-5d emission is observed with 500-530 nm wavelength. The decay accelerates with increasing Ga and Ce concentration. Cel%: Gd2Lu1Ga3Al2O12 shows the highest emission intensity. The light yield of Ce:Gd2Lu1Ga3Al2O12 sample with 3 mm phi x 1 mm size was around 22,000 photon/MeV using calibration from Fe-55 direct irradiation peak to APD. Scintillation decay time was around 50 ns. The theoretical density is 6.88 g/cm(3). (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：35 / 38
页数：4
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