Formation of light-emitting structure on the base of porous SiOx films

This paper presents the first study of porous light-emitting nc-Si-SiOx structures obtained by oblique evaporation of SiO in vacuum and thermal post-annealing. Characterization of the samples was done by optical (280-540 nm) and infrared absorption (800-1200 cm(-1)) spectroscopy and photoluminescence (PL) measurements. The measurements have shown that the density of films gradually decreases from 1.90 g/cm(3) to 0.91 g/cm(3) and porosity increase respectively with increasing of deposition angle from 0 degrees to 75 degrees Photoluminescence (PL) is observed only in annealed samples that is connected with Si nanocrystals formation in oxide matrix. Increasing of deposition angle results in the grows of PL intensity and the shift of peak position to shorter wavelengths. Size of nanocrystals and their volume fraction depends on,films porosity. Conclusion is maid about possibility of controlled changes of structure and light-emitting characteristics of nc-Si-SiOx layers by its porosity changes.