Formation of CNx thin films by reactive pulsed laser deposition assisted by electron cyclotron resonance microwave discharge

被引:10
|
作者
Shi, W
Wu, JD [1 ]
Sun, J
Ling, H
Ying, ZF
Ding, XM
Zhou, ZY
Li, FM
机构
[1] Fudan Univ, State Key Lab Mat Modificat Laser Ion & Electron, Shanghai 200433, Peoples R China
[2] Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China
[3] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China
[4] Fudan Univ, State Key Lab Appl Surface Phys, Shanghai 200433, Peoples R China
[5] Fudan Univ, Inst Modern Phys, Shanghai 200433, Peoples R China
来源
关键词
D O I
10.1007/s003390100806
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Amorphous carbon nitride thin films were synthesized by pulsed laser deposition combined with electron cyclotron resonance (ECR) microwave discharge in nitrogen gas. The ECR discharge supplies active nitrogen species in the deposition environment and to the growing film surface, enhancing the film growth in complex processes accompanied by chemical reaction. The synthesized films were characterized by Rutherford backscattering spectroscopy (RBS), X-ray photoelectron spectroscopy (XPS), Fourier-transform infrared spectroscopy (FTIR), and Raman spectroscopy. The films were determined to consist purely of carbon and nitrogen with a nitrogen concentration of 42%, and have a thickness of 550nm over which carbon and nitrogen are well distributed. Structural characterizations based on XPS, FTIR and Raman analysis showed that these films appear to contain several bonding configurations between carbon and nitrogen with a small amount of C drop N bonds compared with other bonding states.
引用
收藏
页码:605 / 608
页数:4
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