A Temperature Compensation Concept for a Micromachined Film Bulk Acoustic Resonator Oscillator

被引:7
|
作者
Zhang, Xu [1 ]
Xu, Wencheng [1 ]
Chae, Junseok [1 ]
机构
[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA
基金
美国国家科学基金会;
关键词
Piezoelectric transducers; temperature compensation; frequency tuning; FBAR; FBAR oscillator; FBAR; FILTERS; DESIGN; GHZ;
D O I
10.1109/JSEN.2015.2438323
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present a temperature compensation technique of a film bulk acoustic resonator (FBAR)-based oscillator by tuning the supply voltage of the oscillator. The FBAR-based oscillator uses a high-Q FBAR that is made of a thin ZnO piezoelectric film sandwiched by two electrodes. The FBAR is significantly sensitive to temperature change, consequently resulting in large temperature sensitivity of the FBAR-based oscillator. In this paper, we present a temperature compensation technique that improves the temperature coefficient (TCfosc) of a 1.625-GHz FBAR-based oscillator from -118 ppm/K to less than 1 ppm/K by tuning the supply voltage of the oscillator. The tuning technique has a large frequency tunability of -4305 ppm/V.
引用
收藏
页码:5272 / 5277
页数:6
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