2-dimensional simulation and characterization of deep-submicron AlGaN/GaN HEMTs for high frequency applications

被引：0
|
作者：
Parvesh, W. [1 ]
Kaur, Ravneet [1 ]
Pandey, Sujata [3 ]
Haldar, Subhasis [2 ]
Gupta, Nfridula [1 ]
Gupta, R. S. [1 ]
机构：
[1] Univ Delhi, Dept Elect Sci, Semicond Devices Res Lab, South Campus, New Delhi 110021, India
[2] Univ Delhi, Motilal Nehru Coll, Dept Phys, Delhi 110015, India
[3] Amity Sch Engn & Technol, Delhi, India
来源：
2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2 | 2007年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：282 / +
页数：2
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