The effect of Cr- and Y-implantation on the isothermal and cyclic oxidation behaviour in air of a boron doped Ni3Al alloy at 585 and 900 degrees C for up to 200 h is discussed. Yttrium implantation proved to be detrimental, causing slightly higher oxidation rates at both temperatures, while the scale formed at 900 degrees C on Y implanted Ni3Al was prone to spallation. After 200 h at 585 degrees C (isothermal or cyclic oxidation) the scale consisted of an outer NiO layer, an intermediate Ni and al rich oxide zone, and an inner thin alumina layer. A similar scale pattern was observed for the non-implanted material, however, the oxide scale formed on the non-implanted material did not show any significant susceptibility to scale cracking and spallation. Chromium implantation on the other hand was beneficial in that it decreased the oxidation rates at both temperatures owing to the formation of a continuously healing alumina layer, induced by the presence of chromium. No spallation of the oxide scale occurred, even after 200 cycles at 900 degrees C. MST/3882.
机构:
Hokkaido Univ, Fac Engn, Div Mat Sci & Engn, Kita Ku, Kita13 Nishi8, Sapporo, Hokkaido 0608628, JapanHokkaido Univ, Fac Engn, Div Mat Sci & Engn, Kita Ku, Kita13 Nishi8, Sapporo, Hokkaido 0608628, Japan
Kudo, Daiki
Nagashima, Ryouta
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Tokyo Inst Technol, Sch Mat & Chem Technol, Meguro Ku, 2-12-1 Ookayama, Tokyo 1528552, JapanHokkaido Univ, Fac Engn, Div Mat Sci & Engn, Kita Ku, Kita13 Nishi8, Sapporo, Hokkaido 0608628, Japan
Nagashima, Ryouta
Utsumi, Haruki
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Hokkaido Univ, Fac Engn, Div Mat Sci & Engn, Kita Ku, Kita13 Nishi8, Sapporo, Hokkaido 0608628, JapanHokkaido Univ, Fac Engn, Div Mat Sci & Engn, Kita Ku, Kita13 Nishi8, Sapporo, Hokkaido 0608628, Japan
机构:
Cent S Univ Technol, Dept Mat Sci & Engn, Changsha 410083, Peoples R ChinaCent S Univ Technol, Dept Mat Sci & Engn, Changsha 410083, Peoples R China
Zhang, YJ
Li, WM
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机构:Cent S Univ Technol, Dept Mat Sci & Engn, Changsha 410083, Peoples R China
Li, WM
Xie, YQ
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机构:Cent S Univ Technol, Dept Mat Sci & Engn, Changsha 410083, Peoples R China
Xie, YQ
Tang, RZ
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机构:Cent S Univ Technol, Dept Mat Sci & Engn, Changsha 410083, Peoples R China
Tang, RZ
Gao, KY
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机构:Cent S Univ Technol, Dept Mat Sci & Engn, Changsha 410083, Peoples R China
Gao, KY
Lu, WJ
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机构:Cent S Univ Technol, Dept Mat Sci & Engn, Changsha 410083, Peoples R China
机构:
Chinese Acad Sci, Inst Met Res, State Key Lab Corros & Protect, Shenyang 110015, Peoples R ChinaChinese Acad Sci, Inst Met Res, State Key Lab Corros & Protect, Shenyang 110015, Peoples R China
Chen, GF
Lou, HY
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Chinese Acad Sci, Inst Met Res, State Key Lab Corros & Protect, Shenyang 110015, Peoples R ChinaChinese Acad Sci, Inst Met Res, State Key Lab Corros & Protect, Shenyang 110015, Peoples R China